Verification of Charge Transfer in Metal-Insulator-Oxide Semiconductor Diodes via Defect Engineering of Insulator
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Limitations of Mott-Schottky Analysis for Organic Metal-Insulator-Semiconductor Capacitors
Materials, Free Full-Text
Vertical Transport Control of Electrical Charge Carriers in Insulator/Oxide Semiconductor Hetero-structure. - Abstract - Europe PMC
Materials, Free Full-Text
Figure 3 from Charge Trapping Memory Characteristics of Amorphous-Indium–Gallium–Zinc Oxide Thin-Film Transistors With Defect-Engineered Alumina Dielectric
The O 1s spectra of Al2O3. XPS O 1s peak in Al2O3 made with (a) 0.01
Electron-Transport Characteristics through Aluminum Oxide (100) and (012) in a Metal-Insulator-Metal Junction System: Density Functional Theory-Nonequilibrium Green Function Approach. - Abstract - Europe PMC
Demonstrating applicability of the unusual gate current paths as an
Filamentary Resistive Switching and Capacitance-Voltage Characteristics of the a-IGZO/TiO2 Memory. - Abstract - Europe PMC
On Practical Charge Injection at the Metal/Organic Semiconductor Interface
Nanoscale All-Oxide-Heterostructured Bio-inspired Optoresponsive Nociceptor
Effect of the electron mobility of the top semiconductor electrode on
XPS results at different depths for two kinds of TiON film prepared via
High-performance oxide thin-film diode and its conduction mechanism based on ALD-assisted interface engineering - Journal of Materials Chemistry C (RSC Publishing) DOI:10.1039/D2TC03751C
Electron-Transport Characteristics through Aluminum Oxide (100) and (012) in a Metal-Insulator-Metal Junction System: Density Functional Theory-Nonequilibrium Green Function Approach. - Abstract - Europe PMC